Product Details
SIP MOS N 600V 3,6A 80W 2,5R TO220
Specifications
- Maximum Power Dissipation: 80 W
- Maximum Drain-Source Voltage: 600 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Drain Current: 3.6 A
- Maximum Junction Temperature: 150 °C
Electrical Characteristics
- Maximum Gate-Threshold Voltage: 4 V
- Rise Time: 50 nS
- Output Capacitance: 65 pF
- Maximum Drain-Source On-State Resistance: 2.5 Ohm
- Package: TO-220AB
Additional Information
| Device | Transistor |