Product Details
High-Voltage NPN Silicon Power Transistor
High-Voltage NPN Silicon Power Transistor
Features
- High voltage switching capability
- Designed for line output / horizontal deflection stages
- Fast switching performance
- High reliability for inductive loads
Typical Applications
- CRT television horizontal output stage
- High-voltage switching circuits
- Power switching in industrial electronics
- Flyback transformer driver circuits
Pin Configuration (TO-3 Package)
- Case:Collector
- Pin 1:Base
- Pin 2:Emitter
- If you want, I can also provide:
- Equivalent / replacement transistors for BU109
- Full datasheet values (switching times, safe operating area, etc.)
- Comparison with BU208, BU508, BU508A(commonly used substitutes).
Specifications
- Transistor Type: NPN Silicon Power Transistor
- Package: TO-3 metal case
- Collector-Emitter Voltage (VCEO): 700 V (max)
- Collector-Base Voltage (VCBO): 1500 V (max)
- Emitter-Base Voltage (VEBO): 5 V (max)
- Collector Current (IC): 8 A (continuous)
- Peak Collector Current (ICM): 15 A
- Power Dissipation (Pc): 75 W
- DC Current Gain (hFE): 5 – 20
- Transition Frequency (fT): ~4 MHz
- Operating Junction Temperature: −65 °C to +150 °C
Additional Information
| Device | Transistor |