Product Details
N 400V 7A 10/150 TO3 Transistor
N 400V 7A 10/150 TO3 Transistor
Specifications
Absolute Maximum Ratings
- Collector-Base Voltage (VCBO): 400 V
- Collector-Emitter Voltage (VCEO): 150 V
- Emitter-Base Voltage (VEBO): 10 V
- Collector Current (IC): 7 A
- Peak Collector Current (ICM): 15 A
- Base Current (IB): 3 A
- Power Dissipation (PC): 85 W
- Junction Temperature (TJ): up to 200 °C
- Storage Temperature: −65 to +200 °C
Electrical Characteristics
- DC Current Gain (hFE): 10 – 50
- Collector-Emitter Saturation Voltage: ≈ 2.5 V (at IC = 7 A)
- Transition Frequency (fT): ~5–10 MHz
- Collector Cutoff Current (ICBO): ≤ 500 µA
General
- Polarity: NPN
- Material: Silicon
- Mounting: Through-hole
- Typical Application: Horizontal deflection/output stage in CRT TV circuits and other high-voltage switching applications.
Additional Information
| CatGroup | Transistor |
| Device | Transistor |
