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BU104

BU104

Normaler Preis Dhs. 6.18
Normaler Preis Verkaufspreis Dhs. 6.18
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Product Details

N 400V 7A 10/150 TO3 Transistor

N 400V 7A 10/150 TO3 Transistor

Specifications

Absolute Maximum Ratings

  • Collector-Base Voltage (VCBO): 400 V
  • Collector-Emitter Voltage (VCEO): 150 V
  • Emitter-Base Voltage (VEBO): 10 V
  • Collector Current (IC): 7 A
  • Peak Collector Current (ICM): 15 A
  • Base Current (IB): 3 A
  • Power Dissipation (PC): 85 W
  • Junction Temperature (TJ): up to 200 °C
  • Storage Temperature: −65 to +200 °C

Electrical Characteristics

  • DC Current Gain (hFE): 10 – 50
  • Collector-Emitter Saturation Voltage: ≈ 2.5 V (at IC = 7 A)
  • Transition Frequency (fT): ~5–10 MHz
  • Collector Cutoff Current (ICBO): ≤ 500 µA

General

  • Polarity: NPN
  • Material: Silicon
  • Mounting: Through-hole
  • Typical Application: Horizontal deflection/output stage in CRT TV circuits and other high-voltage switching applications.

Additional Information

CatGroup Transistor
Device Transistor