N 25V 150mA 6DB TO39

Transistor Silicon NPN

Specifications

Case	TO50
Vbr CBO	25
@Freq. (test)	500M
@Ic (A)	10m
@Ic (A)	25m
Mat.	Silicon Logic
Noise Fig.	2.7
Oper. Gain Typ (S21)	16
f(osc) Max. (Hz)	4.5G
Polarity	NPN
PD Max. (W)	180m
S11 Deg. (Typ)	-166
S11 Mag Typ.	0.08
S22 Deg. Typ.	-19
S22 Mag Typ.	0.47
@VDS (VCE) (test) (V)	10
Coll. (or drain) Current Max.	35m
@Freq. (test)	500M
@VCE (test)	10
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-16
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.13 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.025 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	1.4 pF
Transition Frequency (ft):	1000 MHz
Forward Current Transfer Ratio (hFE), MIN	20

Device

Transistor