Product Details
Transistor Silicon PNP
Transistor Silicon PNP
Specifications
| Case | TO92 | |
| Vbr CBO | 40 | |
| Vbr CEO | 40 | |
| Max. PD (W) | 250m | |
| C(ob) (F) | 320f | |
| hfe | 65 | |
| Ic Max. (A) | 25m | |
| Icbo Max. @Vcb Max. (A) | 50n | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 325M | |
| @VCE (test) (V) | 10 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 1.0m | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.15 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Collector-Emitter Voltage |Vce| | 40 V | |
| Maximum Emitter-Base Voltage |Veb| | 4 V | |
| Maximum Collector Current |Ic max| | 0.025 A | |
| Max. Operating Junction Temperature (Tj) | 125 °C | |
| Collector Capacitance (Cc) | 0.7 pF | |
| Transition Frequency (ft): | 325 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
Additional Information
| Device | Transistor |