SI-P 300V 0.1A 0.83W

Transistor Silicon PNP

Specifications

Case	TO92
Vbr CBO	300
Vbr CEO	300
Max. PD (W)	800m
Derate (Amb) (W/°C)	6.6m
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	10n
Polarity	PNP
Trans. Freq (Hz) Min.	60M
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.83 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.025 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	1.6 pF
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	50

Device

Transistor