N 250V 250V 100MA 25MN TO39 Transistor
Transistor Silicon NPN
Specifications
| Case |
TO39 |
| Vbr CBO |
250 |
| Vbr CEO |
250 |
| Max. PD (W) |
5.0 |
| Min hFE |
25 |
| Ic Max. (A) |
100m |
| @Ic (test) (A) |
30m |
| Icbo Max. @Vcb Max. (A) |
50n |
| Polarity |
NPN |
| R(sat) (Û) |
33m |
| Derate Above 25°C |
28m |
| Trans. Freq (Hz) Min. |
90M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.8 W |
| Maximum Collector-Base Voltage |Vcb| |
250 V |
| Maximum Collector-Emitter Voltage |Vce| |
250 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
7 pF |
| Transition Frequency (ft): |
55 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
Additional Information
