Product Details
P 80V 80V 4A 40MN TOP66
P 80V 80V 4A 40MN TOP66
Specifications
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 3 MHz
- Forward Current Transfer Ratio (hFE), MIN: 40
- Package: TO220
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Additional Information
| Device | Transistor |