P 60V 60V 4A 25MN TO126 Transistor
Transistor Silicon PNP
Specifications
| Case |
TO126 |
| Vbr CBO |
60 |
| Vbr CEO |
60 |
| Max. PD (W) |
36 |
| Derate (Amb) (W/°C) |
288m |
| Min hFE |
20 |
| Ic Max. (A) |
4.0 |
| @Ic (test) (A) |
10m |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
PNP |
| R(sat) (Û) |
400m |
| Trans. Freq (Hz) Min. |
3.0M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
36 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
4 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
Additional Information
