Bipolar Transistor General Purpose NPN VcBo = 100, VcE0 =60, icMax = 15A, Ptot = 100W, Hfe = 20 Ft = 1Mhz, TO3 - Metal Pkg.
Bipolar General Purpose Transistor
Specifications
| Case |
TO3 |
| Vbr CBO |
100 |
| Vbr CEO |
60 |
| Max. PD (W) |
100 |
| Max. hFE |
70 |
| Min hFE |
20 |
| Ic Max. (A) |
15 |
| @Ic (test) (A) |
4.0 |
| Icbo Max. @Vcb Max. (A) |
5.0m |
| Polarity |
NPN |
| Derate Above 25°C |
666m |
| Trans. Freq (Hz) Min. |
1.1M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
4-30 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
100 W |
| Maximum Collector-Base Voltage |Vcb| |
100 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
15 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Transition Frequency (ft): |
1 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
Additional Information
