30V 25V 100MA 450MN X10 Transistor
Transistor Silicon PNP
Specifications
| Case |
TO92 |
| Vbr CBO |
30 |
| Vbr CEO |
25 |
| Max. PD (W) |
250m |
| C(ob) (F) |
6.0p |
| Derate (Amb) (W/°C) |
3.0m |
| hfe |
120 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
15n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
150M |
| @VCE (test) (V) |
5.0 |
| Oper. Temp (°C) Max. |
125 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-17 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
25 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
8 pF |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
75 |
Additional Information
