Product Details
P 60V 50V 200MA 200MN X10 Transistor
Transistor Silicon PNP
Specifications
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 200 MHz
- Collector Capacitance (Cc): 9 pF
- Forward Current Transfer Ratio (hFE), MIN: 200
Additional Information
| Device | Transistor |