Product Details
N 45V 45V 100MA 125MN X10 Transistor
Transistor Silicon NPN
Specifications
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 45 V
- Maximum Collector-Emitter Voltage |Vce|: 45 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 100 MHz
- Collector Capacitance (Cc): 6 pF
- Forward Current Transfer Ratio (hFE), MIN: 125
Additional Information
| Device | Transistor |