Product Details
SI-N 160V 1A 0.9W 100MHz TO92L Silicon Transistor.
Silicon Transistor
Specifications
Absolute Maximum Ratings (Ta=25°C)
- Collector Base Voltage : 160V
- Collector Emitter Voltage : 160V
- Emitter Base Voltage : 6V
- Collector Current Continuous : 1A
- Collector Power Dissipation : 0.75W
- Junction Temperature Range : -55°C to 150°C
- Storage Temperature Range : -55°C to 150°C
Electrical Characteristics (TA=25°C)
- Collector Base Breakdown Voltage : 160V
- Collector Emitter Breakdown Voltage : 160V
- Emitter Base Breakdown Voltage : 6V
- Collector Cut off Current : 1µA
- Collector Cut off Current : 10µA
- Emitter Cut off Current : 1µA
- Collector Emitter Saturation Voltage : 1V
- Base Emitter ON Voltage : 0.75V
- Transition Frequency : 20MHz
Downloads
Additional Information
| CatGroup | Transistor |
| Frequency Response | 100MHz |
| Import Data | SI-N 160V 1A 0.9W 100MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | NPN |
| Material | Silicon |
| Power Dissipation | 0.9A |