Product Details
P 130V 7A 40W 30MHz
Transistor Silicon PNP
Specifications
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 130 V
- Maximum Collector-Emitter Voltage |Vce|: 120 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 7 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 15 MHz
- Forward Current Transfer Ratio (hFE), MIN: 100
Additional Information
| Device | Transistor |