Product Details
Silicon PNP Power Transistor
Silicon PNP Power Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 30 W
- Maximum Collector-Base Voltage |Vcb|: 130 V
- Maximum Collector-Emitter Voltage |Vce|: 100 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 15 MHz
- Forward Current Transfer Ratio (hFE), MIN: 50
Additional Information
| Device | Transistor |