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2SB775

2SB775

Normaler Preis Dhs. 12.25
Normaler Preis Verkaufspreis Dhs. 12.25
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Product Details

P 100V 6A 60W 13MHZ

P 100V 6A 60W 13MHZ

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -85 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 18 MHz
  • Operating and Storage Junction Temperature Range: -45 to +150 °C
  • Package: TO-3P

Additional Information

Frequency Response 13MHz
Import Data SI-P 100V 6A 60W 13MHz
Keywords BJT
Device Transistor
Type Bipolar Junction
Polarity PNP
Material Silicon
Power Dissipation 60A