Product Details
P 30V 0.1A 120MHz
P 30V 0.1A 120MHz
Specifications
- Type Designator: 2SB641
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.4 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 0.1 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 150(typ) MHz
- Collector Capacitance (Cc): 3.5 pF
- Forward Current Transfer Ratio (hFE), MIN: 160
- Noise Figure, dB: -
- Package: SC71
Additional Information
| Frequency Response | 120MHz |
| Import Data | SI-P 30V 0.1A 120MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.4A |