Product Details
Transistor Silicon PNP
Transistor Silicon PNP
Specifications
| Case | TO220 | |
| Vbr CBO | 130 | |
| Vbr CEO | 120 | |
| Max. PD (W) | 20 | |
| Derate (Amb) (W/°C) | 160m | |
| Max. hFE | 250 | |
| Min hFE | 40 | |
| Ic Max. (A) | 1.5 | |
| @Ic (test) (A) | 300m | |
| Icbo Max. @Vcb Max. (A) | 1.0u | |
| Polarity | PNP | |
| R(sat) (Û) | 2.0 | |
| Trans. Freq (Hz) Min. | 40M | |
| Oper. Temp (°C) Max. | 150 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 4-43 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 18 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector-Emitter Voltage |Vce| | 110 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Transition Frequency (ft): | 30 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 80 | |
Additional Information
| Device | Transistor |