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2SB536

2SB536

Normaler Preis Dhs. 5.73
Normaler Preis Verkaufspreis Dhs. 5.73
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Product Details

P 140V 1,5A TO220

P 140V 1,5A TO220

Specifications

Type Designator: 2SB536
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 18 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: –
Package: TO220

Additional Information

Frequency Response 40MHz
Import Data SI-P 130V 1.5A 20W 40MHz
Keywords BJT
Device Transistor
Type Bipolar Junction