P DAR + DI 100V 8A 40W TO-220Fa
P DAR + DI 100V 8A 40W TO-220Fa
Specifications
| Case |
TO220F |
| Type |
Transistor Silicon PNP |
| Manufacturer |
Rohm Semiconductor |
| Vbr CEO |
100 |
| Max. PD (W) |
30 |
| Max. hFE |
10k |
| Min hFE |
1k |
| Ic Max. (A) |
8 |
| @Ic (test) (A) |
2 |
| Mat. |
Silicon Logic |
| Polarity |
PNP |
| @VCE (test) |
3 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
30 W |
| Maximum Collector-Base Voltage |Vcb| |
120 V |
| Maximum Collector-Emitter Voltage |Vce| |
120 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
8 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Forward Current Transfer Ratio (hFE), MIN |
10000 |
Additional Information
