Product Details
Transistor Silicon PNP
Transistor Silicon PNP
Specifications
| Vbr CBO | 40 | |
| Vbr CEO | 20 | |
| Max. PD (W) | 500m | |
| Derate (Amb) (W/°C) | 2.5m | |
| hfe | 120 | |
| Ic Max. (A) | 500m | |
| Icbo Max. @Vcb Max. (A) | 200n | |
| Polarity | PNP | |
| @VCE (test) (V) | 1.0 | |
| Oper. Temp (°C) Max. | 125 | |
| @Ic (A) | 100m | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.5 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Collector-Emitter Voltage |Vce| | 20 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 0.5 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Collector Capacitance (Cc) | 30 pF | |
| Transition Frequency (ft): | 50 MHz | |
Additional Information
| Device | Transistor |