SI-N 80V 10A 150W >4MHz

P 80V 20A 150W 4MHz TO-3-2

Specifications

Mounting Style:	Through Hole
Package/Case:	TO-3-2
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	80 V
Collector- Base Voltage VCBO:	80 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1 V
Maximum DC Collector Current:	20 A
Pd - Power Dissipation:	150 W
Gain Bandwidth Product fT:	4 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Continuous Collector Current:	10 A
DC Collector/Base Gain hFE Min:	35 at 1 A, 4 V
DC Current Gain hFE Max:	100 at 4 A, 4 V
Product Type:	BJTs - Bipolar Transistors

Device

Transistor