P 350V 300V 1A 30/120 TO39

P 350V 300V 1A 30/120 TO39 Transistor

Specifications

RoHS:	N
Mounting Style:	Through Hole
Package/Case:	TO-5-3
Transistor Polarity:	PNP
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	300 V
Collector- Base Voltage VCBO:	350 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	2.5 V
Maximum DC Collector Current:	1 A
Pd - Power Dissipation:	1 W
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 200 C
Brand:	Microchip Technology
Continuous Collector Current:	1 A
DC Collector/Base Gain hFE Min:	15
DC Current Gain hFE Max:	120
Product Type:	BJTs - Bipolar Transistors

Device

Transistor