Product Details
FET N-Channel 800V 9A 160W 900MR TO220
FET N-Channel 800V 9A 160W
Specifications
- Channel Type: N Channel
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 9A
- Drain Source Voltage Vds: 800V
- Drain Source On State Resistance: 0.78ohm
- On Resistance Rds(on): 0.78ohm
- Rds(on) Test Voltage: 10V
- Transistor Mounting: Through Hole
- Gate Source Threshold Voltage Max: 3.75V
- Power Dissipation Pd: 160W
- Transistor Case Style: TO-220
- Power Dissipation: 160W
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
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Additional Information
| Device | Transistor |