Product Details
MOSFET P-Channel 60 V 8.8A (Tc) 2.5W (Ta), 42W
MOSFET P-Channel Transistor
Specifications
|
FET Type
|
P-Channel |
|
Technology
|
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss)
|
60 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
8.8A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
280mOhm @ 5.3A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
19 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
570 pF @ 25 V
|
|
Power Dissipation (Max)
|
2.5W (Ta), 42W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
TO-251AA
|
Additional Information
| Device | Transistor |