Product Details
N-Channel MOSFET 800V 4,1A 125W
N-Channel MOSFET Transistor
Specifications
|
FET Type
|
N-Channel |
|
Technology
|
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss)
|
800 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
4.1A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
3Ohm @ 2.5A, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
78 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1300 pF @ 25 V
|
|
Power Dissipation (Max)
|
125W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
TO-220AB
|
Additional Information
| Device | Transistor |