Product Details
1 100V 60V 1A 30MN TO5 NPN Transistor
1 100V 60V 1A 30MN TO5 NPN Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 0.8 W
- Maximum Collector-Base Voltage |Vcb|: 100 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 50 MHz
- Collector Capacitance (Cc): 12 pF
- Forward Current Transfer Ratio (hFE), MIN: 30
Additional Information
| Device | Transistor |