Product Details
Transistor Silicon PNP
Transistor Silicon PNP
Specifications
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.025 A
- Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
- Transition Frequency (ft): 325 MHz
- Collector Capacitance (Cc): 0.7 pF
- Forward Current Transfer Ratio (hFE), MIN: 30
Additional Information
| Device | Transistor |
