Product Details
N 300V 225V 100mA 20MN TO39
Transistor Silicon NPN
Specifications
- Maximum Collector Power Dissipation (Pc): 0.8 W
- Maximum Collector-Base Voltage |Vcb|: 300 V
- Maximum Collector-Emitter Voltage |Vce|: 225 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
- Transition Frequency (ft): 80 MHz
- Collector Capacitance (Cc): 6 pF
- Forward Current Transfer Ratio (hFE), MIN: 20
Additional Information
| Device | Transistor |