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BD682

BD682

Regular price Dhs. 8.25
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Product Details

P-DARL+Di 100V 4A 40W TO126

Specifications

  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 40 W
  • Maximum Collector-Base Voltage |Vcb|: 100 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

  • Transition Frequency (ft): 1 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 750
  • Package: TO126

Additional Information

Device Transistor