P 64V 60V 250MA 10MN TO39 Transistor
Transistor Silicon PNP
Specifications
| Case |
TO5 |
| Vbr CBO |
64 |
| Vbr CEO |
64 |
| Max. PD (W) |
410m |
| Derate (Amb) (W/°C) |
3.3m |
| hfe |
35 |
| Ic Max. (A) |
250m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
1.5M |
| @VCE (test) (V) |
6.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.41 W |
| Maximum Collector-Base Voltage |Vcb| |
64 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
12 V |
| Maximum Collector Current |Ic max| |
0.25 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
150 pF |
| Transition Frequency (ft): |
0.45 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
10 |
Additional Information
