P 60V 60V 1A 100MN TO39

Transistor Silicon PNP

Specifications

Transistor Polarity:	PNP
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	5 V
Maximum DC Collector Current:	1 A
Pd - Power Dissipation:	3.7 W
Gain Bandwidth Product fT:	50 MHz
Maximum Operating Temperature:	+ 150 C
Packaging:	Bulk
Brand:	STMicroelectronics
Continuous Collector Current:	1 A
DC Collector/Base Gain hFE Min:	120
Height:	6.6 mm
Length:	9.4 mm

Device

Transistor