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2SB897

2SB897

Regular price Dhs. 13.50
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Product Details

Transistor Silicon NPN

Transistor Silicon NPN

Specifications

Case TO3
Vbr CBO 130
Vbr CEO 110
Max. PD (W) 100
Max. hFE 200
Min hFE 50
Ic Max. (A) 10
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 200 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 50

Additional Information

Device Transistor