Product Details
P 25V 1A
SI-P 25V 1A 0.9W 180MHz
Specifications
- Type Designator: 2SB544
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.9 W
- Maximum Collector-Base Voltage |Vcb|: 25 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 1 A
- Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 90 MHz
- Collector Capacitance (Cc): 50 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Noise Figure, dB: -
- Package: TO92
Additional Information
| Frequency Response | 180MHz |
| Import Data | SI-P 25V 1A 0.9W 180MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.9A |