{"product_id":"irf830","title":"IRF830","description":"\u003cdiv class=\"communicaintro\"\u003e\u003cspan\u003eSIP MOS N-Channel 500V 4,5A TO220\u003c\/span\u003e\u003c\/div\u003e\u003ch1\u003eN - Channel  PowerMOS Transistor\u003c\/h1\u003e\u003cdiv class=\"communicadesc\"\u003e\n\u003ch2\u003eSpecifications\u003c\/h2\u003e\n\u003cdiv\u003e\n\u003cul\u003e\r\n\u003cli\u003eMaximum Power Dissipation: 100 W\u003c\/li\u003e\r\n\u003cli\u003eMaximum Drain-Source Voltage: 500 V\u003c\/li\u003e\r\n\u003cli\u003eMaximum Gate-Source Voltage: 20 V\u003c\/li\u003e\r\n\u003cli\u003eMaximum Drain Current: 4.5 A\u003c\/li\u003e\r\n\u003cli\u003eMaximum Junction Temperature: 150 °C\u003c\/li\u003e\r\n\u003c\/ul\u003e\r\n\u003cp\u003eElectrical Characteristics\u003c\/p\u003e\r\n\u003cul\u003e\r\n\u003cli\u003eMaximum Gate-Threshold Voltage: 4 V\u003c\/li\u003e\r\n\u003cli\u003eTotal Gate Charge: 22 nC\u003c\/li\u003e\r\n\u003cli\u003eRise Time: 8 nS\u003c\/li\u003e\r\n\u003cli\u003eOutput Capacitance: 120 pF\u003c\/li\u003e\r\n\u003cli\u003eMaximum Drain-Source On-State Resistance: 1.5 Ohm\u003c\/li\u003e\r\n\u003cli\u003ePackage: TO220\u003c\/li\u003e\r\n\u003c\/ul\u003e\n\u003c\/div\u003e\n\u003ch2\u003eAdditional Information\u003c\/h2\u003e\n\u003cdiv\u003e\u003ctable border=\"1\" cellpadding=\"7\"\u003e\u003ctbody\u003e\u003ctr\u003e\n\u003ctd\u003eDevice\u003c\/td\u003e\n\u003ctd\u003eTransistor\u003c\/td\u003e\n\u003c\/tr\u003e\u003c\/tbody\u003e\u003c\/table\u003e\u003c\/div\u003e\n\u003c\/div\u003e","brand":"Communica","offers":[{"title":"Default Title","offer_id":45624699486252,"sku":"IRF830","price":12.5,"currency_code":"AED","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0300\/5376\/1068\/files\/76107c40465bad5e2059eccc87ce4fa2.jpg?v=1781108780","url":"https:\/\/xytron.ae\/products\/irf830","provider":"Xytron","version":"1.0","type":"link"}